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| Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT148S-600Z BT148M-600Z Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices feature a gate-cathode reverse breakdown voltage specification. They can be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. MAX. 600Z 600 2.5 4 35 UNIT V A A A BT148S (or BT148M)Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab cathode anode gate anode gate anode cathode anode PIN CONFIGURATION tab SYMBOL a k 2 1 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM PGM PG(AV) Tstg Tj PARAMETER Repetitive peak off-state voltage Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb 111 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state ITM = 10 A; IG = 50 mA; current after triggering dIG/dt = 50 mA/s Peak gate current Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 600 1 UNIT V A A A A A2s A/s A W W C C 2.5 4 35 38 6.1 50 2 5 0.5 150 1252 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 2 Note: Operation above 110C may require the use of a gate to cathode resistor of 1k or less. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT148S-600Z BT148M-600Z TYP. 75 MAX. 3.0 - UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGR VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate-cathode reverse breakdown voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 5 A IG = -20 A IG = -150 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 14 0.1 TYP. 15 0.17 0.10 1.23 0.4 0.2 0.1 MAX. 200 10 6 1.8 20 1.5 0.5 UNIT A mA mA V V V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 100 ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 8 A; VR = 10 V; dITM/dt = 10 A/s; dVD/dt = 2 V/s; RGK = 1 k MIN. TYP. 50 2 100 MAX. UNIT V/s s s September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level BT148S-600Z BT148M-600Z 6 5 4 3 2 1 0 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT148 Tmb(max) / C ITSM / A 107 110 40 IT I TSM T time 1.9 2.2 2.8 4 a = 1.57 113 116 119 30 Tj initial = 25 C max 20 10 122 125 3 0 0.5 1 1.5 IF(AV) / A 2 2.5 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). BT148 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 ITSM / A 12 10 8 IT(RMS) / A BT150 dIT /dt limit 100 ITSM 6 4 2 0 0.01 IT time T Tj initial = 25 C max 10 10us 100us T/s 1ms 10ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 111C. VGT(Tj) VGT(25 C) 5 IT(RMS) / A BT148Z 1.6 111 C BT151 4 1.4 1.2 1 3 2 0.8 1 0.6 0 -50 0 50 Tmb / C 100 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. September 1997 3 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level BT148S-600Z BT148M-600Z 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BT148 12 10 IT / A Tj = 125 C Tj = 25 C Vo = 1.26 V Rs = 0.099 ohms BT148 typ max 8 6 4 2 0 0 -50 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 BT145 10 Zth j-mb (K/W) BT148 1 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1 P D tp t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 3 2.5 2 1.5 1 0.5 BT145 1000 RGK = 100 ohms 100 10 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. September 1997 4 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level MECHANICAL DATA Dimensions in mm Net Mass: 1.1 g 6.73 max 1.1 2.38 max 0.93 max seating plane BT148S-600Z BT148M-600Z 5.4 tab 4 min 6.22 max 10.4 max 4.6 2 1 2.285 (x2) 0.5 min 0.5 0.3 0.5 3 0.8 max (x2) Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 2.5 1.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". September 1997 5 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT148S-600Z BT148M-600Z This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100 |
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